| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1997-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0943f26051bacba4673eb9944ab72cab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c350230e6a698f1afd69939a112ca7e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a01785baba48e90289b01fb75b08465c |
| publicationDate |
1998-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19710688-A1 |
| titleOfInvention |
Process for making contact with a semiconductor substrate |
| abstract |
Producing a conductive plug comprises: (1) on one semiconductor substrate forming one device with conductive region;(2) on the semiconductor substrate forming one insulator; (3) etching the insulator to form one contact hole, which expose the device conductive region; (4) on the contact hole surface forming one diffusion barrier layer; (5) in one reaction chamber, applying one hydrogen plasma to process the diffusion barrier layer; (6) in the contact hole filling one conductor to form one conductive plug. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7889434-B2 |
| priorityDate |
1996-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |