| abstract |
A metal line structure comprising an electrically conductive line (14) and an insulating film (11, 18) for electrically insulating the electrically conductive line (14), wherein a portion of the insulating film adjacent to the electrically conductive line (14) has an increased density or impurity doping, to obtain a transition layer (13) consisting of one or more of the following compounds: Cu 3 B 2 , Cu 3 P, Cu 3 Si or Cu 2 N, or one or more of the oxides Cu (BO 2 ) 2 , Cu 3 (PO 4 ) 2 , CuSiO 4 or Cu (NO 3 ) 2 . |