http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19649500-A1

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8083
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772
filingDate 1996-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a0a9e00e82ae78864aa941ba20fda98
publicationDate 1997-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-19649500-A1
titleOfInvention Hybrid electronic device, especially Josephson transistors
abstract The device has flat areas of high (11) and low (12) flat areas each having an Nbs, and are provided on a p-InAs main body (10). The flat areas has steps each having a side area provided in horizontal directions. The p-InAs main body has a continuous inversion channel (14), which is provided under the high flat area, and prolonged along with the side area. A first superconductive layer is provided on the high flat area which has a thickness thinner than the height of the side area. A second superconductive layer is provided on the low flat area in which an electronic-conduction channel is formed between Nb through the inversion channel.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19757566-A1
priorityDate 1995-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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