| abstract |
The luminescent layer in a III-V compound semiconductor of general formula InxGayAlzN, with x, y, z values specified. The charge inspection layer in also a III-V compound semiconductor of similar formula and band spacing exceeding that of the luminescent layer which is located between and in contact with two charge injection layers. There is at least a three-part base layer between the luminescent layer and substrate, forming a III-V semiconductor of general formula of InuGavAlwN with specified u, v, w values. At least one part-layer of the base layer is sandwiched by two layers of InN mixed crystal ratio of specified doping. |