| abstract |
Lead frame for a plastic mold type semiconductor device, which is made of a copper alloy material, which is partially plated with at least one noble metal whose thickness is not more than 10 microns and not less than 1.5 microns, for wire bonding or chip bonding purposes, selected from silver, gold and palladium, wherein the entire area or a predetermined area of the surface of the copper alloy material at least on the side to be contacted with a coating resin has a thin noble metal plating, the thickness of which is not more than 0.5 μm and not less than 0.001 μm, from at least one selected from silver, gold, platinum and palladium. |