Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8401bd1a86a10d5508942a53475fc38 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4853 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-48 |
filingDate |
1996-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ffded3cab6f55d7c6fc9ca76d12dd1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_863bd3559a737533ccdf9595579d33d2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4db4aa0cd597b2d80a91c3a1c2801ff2 |
publicationDate |
1998-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
DE-19631565-A1 |
titleOfInvention |
Method for producing palladium contact bumps on semiconductor circuit carriers |
abstract |
Electroless deposition of uniformly thick, adherent Pd contact bumps (preferably of \-2 microns height) on the aluminium conductor structures of semiconductor circuit carriers involves subjecting the conductor structure surfaces to (a) cleaning; (b) treatment with an acidic Pd ion-containing activating solution; and (c) electroless Pd deposition from a bath of pH 4-7 (preferably 5.3-5.8), containing Pd ions, formic acid (or derivative) as reductant and a nitrogen-containing complex former for the Pd ions. Also claimed are otherwise identical processes in which treatment with an aqueous zinc ion-containing solution is carried out between steps (a) and (b) and/or the Pd contact bumps have \-2 microns height. Further claimed are (i) a semiconductor circuit carrier obtained by one of the above processes; and (ii) methods of contacting semiconductor circuit carriers with hybrid circuit carriers by the flip-chip technique using Pd contact bumps produced by the above processes. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19905807-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/SG-135164-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1175697-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6720257-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006005605-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004046258-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0048242-A1 |
priorityDate |
1996-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |