| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-414 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N3-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N33-48728
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-772 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-416
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06N3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N33-487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-327 |
| filingDate |
1996-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1997-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa52acbe186c3060d93ec658f125251e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a44d70ab3e3e75346d0e1ab23db424e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_463e159eddee9159c946f3aa1f35065e |
| publicationDate |
1997-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19623517-C1 |
| titleOfInvention |
MOS transistor for biotechnical applications |
| abstract |
The MOS transistor has a gate electrode conductively connected to a contact surface (pad). The pad is electrochemically corrosion resistant and dimensioned for connection to a living cell. The surface topology is relatively even and protected by a dielectric passivation layer apart from the portion containing the contact surfaces. The ratio of the gate width to the gate length is greater than 3 to 1. Polysilicon is provided between the gate electrode, contact surfaces and the electrically conductive connection. The polysilicon is silicised with a metal from the group titanium, tantalum, tungsten, cobalt, molybdenum, platinum and palladium. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7470962-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10251243-B3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004010635-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7034371-B2 |
| priorityDate |
1996-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |