| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 |
| filingDate |
1996-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2334e8cddcf8a98980493751d1993e78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b92490733f43d974378095392f9307fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2e07df9db9a274f07d4ffc254bf5c73 |
| publicationDate |
1996-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19622704-A1 |
| titleOfInvention |
Epitaxial wafer and method for its manufacture |
| abstract |
The epitaxial wafer has n-conductive and p-conductive epitaxial layers (1-4; 6,7) forming a pn junction, the epitaxial layers formed from GaAsP with a P of at least 45%, or from GaP. The p-conductive epitaxial layers are provided by a first layer (6) at one side of the pn junction with a carrier conc. of between 0.5 and 5 times 10 to the power 18 per cubic cm and a second surface layer with a carrier conc. of at least 5 times 10 to the power 18 per cubic cm. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19808446-C2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6171394-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0881667-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0881667-A3 |
| priorityDate |
1995-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |