http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19612388-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48464 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-641 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-64 |
| filingDate | 1996-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34530dcbb75e11e5f2d67d862a544bca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02da23ba2e5cce8601adb25ce0ef84f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_765c53469e359806d22f4db7bb48a623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d0db82c243df80a08f21c4be7ab514b |
| publicationDate | 1997-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-19612388-A1 |
| titleOfInvention | Integrated semiconductor circuit |
| abstract | The invention concerns a semiconductor integrated circuit with a component (3) which is formed on a semiconductor substrate (2) and comprises an active PN junction (6) formed between a first semiconductor region (4) with a first type of conductivity and a second semiconductor region (5) with a second type of conductivity. The semiconductor integrated circuit also comprises a protective circuit (8) which is associated with the component (3) for discharging overvoltages and electrostatic charges. The protective circuit (8) associated with the component (3) comprises a protective PN junction (9) which is formed on a semiconductor carrier (7) and has a first semiconductor carrier region (10), which is disposed in the semiconductor carrier (7) and has the first type of conductivity, and a second semiconductor carrier region (11) having the second type of conductivity. The second semiconductor carrier region (11) with the second type of conductivity is electrically coupled to the first semiconductor region (4) with the first type of conductivity formed in the semiconductor substrate (2). |
| priorityDate | 1996-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.