http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19531618-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-082 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8222 |
| filingDate | 1995-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b632cf336316475aefdb09c5a052527 |
| publicationDate | 1996-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-19531618-A1 |
| titleOfInvention | Bipolar transistor, semiconductor device with bipolar transistors and method for producing the same |
| abstract | The transistor includes a semiconductor substrate (1) of one conductivity type with a main surface having a layer (4) with of opposite conductivity to the substrate. Also provided is a buried diffusion layer (2a) and a base region (5) which are of the layer conductivity. Collector and emitter (11b) regions are provided of the first conductivity. The diffusion layer extends both in the semiconductor layer and in the substrate. The base region is formed on a surface of the semiconductor layer over the buried diffusion layer. The collector region has a first tubular region (16a) of first conductivity, surrounding side ends of the base region. It extends through the semiconductor layer up to the diffusion layer, while a second collector region (3a) overlaps, by its lower end, the outer end of the first region. In the diffusion layer it is so shaped that it forms a bottom face. On a surface of the base region is formed an emitter region (11b) of first conductivity. |
| priorityDate | 1994-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.