| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-915 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
1995-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c974c0a6fd4fcaa39e36b043e98cd4ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64a2cce5ac5a9283a76cd9423f0c43d3 |
| publicationDate |
2009-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19521150-B4 |
| titleOfInvention |
Wiring structure of a Halbleiterbaulementes and method for their preparation |
| abstract |
Wiring structure of a semiconductor device, with A semiconductor substrate (31), An insulating layer (35) formed on the semiconductor substrate and having an opening formed therein, A diffusion barrier film (37) and A metal layer (41) or a second diffusion barrier film (42) on the diffusion barrier film, characterized in that - The diffusion barrier film (37) on the side walls of the opening has a surface smoothed by means of eroding plasma radiation etching surface on which the metal layer (41) or the second diffusion barrier film (42) is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103066096-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103066096-B |
| priorityDate |
1994-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |