http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-1803884-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G28-007
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G28-00
filingDate 1968-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b0b5573608fead85c35881ab5ffab05
publicationDate 1970-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-1803884-A1
titleOfInvention Process for producing high purity arsenic trichloride
abstract The product has a sulphur content less than 0.1 ppm and is prepared by passing very pure gaseous HCl over heated As2O3 in the presence of O2. The resulting gases contain AsCl3 and sulphur oxide containing aqueous HCl. These are cooled to give a two phase condensate. The arsenic chloride condensate is separated from the HCl solution and treated with substances having a high oxygen affinity in order to remove chemically bound oxygen in the form of difficulty volatile oxychlorides, oxyhydrates or oxides. Suitable substances are the halides of aluminium, gallium and indium.
priorityDate 1968-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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