| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-967
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-15 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-5338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02661 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78 |
| filingDate |
1965-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1975-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1975-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-1544261-C3 |
| titleOfInvention |
Process for the epitaxial deposition of a monocrystalline layer of a semiconductor material crystallizing according to the diamond or zincblende grid |
| priorityDate |
1965-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |