| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-936 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2632
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
1959-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46dfcf381753c2592f2824737a84fa61 |
| publicationDate |
1962-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-1127484-B |
| titleOfInvention |
Semiconductor crystal diode with planar PN transition over the entire cross section of the semiconductor body and process for its manufacture |
| priorityDate |
1958-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |