| abstract |
A semiconductor device includes a semiconductor chip having a main surface, a first conductivity type drift layer formed in a surface layer portion of the main surface, a trench-gate structure formed in the main surface so as to be in contact with the drift layer, a drift layer formed in the drift layer A second conductivity type channel region covering a sidewall of the trench-gate structure, and having first and second source/drain regions formed at intervals in a region along the sidewall of the trench-gate structure in the drift layer , so that they face each other across the canal region. |