| abstract |
A method (4000) of forming a semiconductor device (1600), the method comprising: forming (4002) a nanolayer stack over a substrate (1604), the nanolayer stack including one or more first semiconductor layers (1606) and one or more first sacrificial layers (1608) forming (4004) a trench (1706) by removing a portion of the one or more first semiconductor layers and the one or more first sacrificial layers, the trench exposing a surface of a bottom sacrificial layer of the one or more first sacrificial layers; andfilling (4006) the trench with one or more second semiconductor layers (1802) and one or more second sacrificial layers (1804) such that each of the one or more second semiconductor layers is in contact with a sidewall of one of the one or more first semiconductor layers, wherein the one or more second semiconductor layers each form a vertical fin whose long sides are defined by sides of the trench. |