| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2020-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d05f1f86d9fa7250567755f12c7d0d53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ff5fdd76cb14e20e49589d29bc268ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13d025559edc2387314189acef1872b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a0d4d27d1a2b59ae262b4bb505d8f08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa65433cb020f284926f7bab91cbe17c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c16a65ceb9b10cdbc3a0845a4e90f0b0 |
| publicationDate |
2021-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-112020000199-T5 |
| titleOfInvention |
Transistor channel with vertically stacked nanosheets, which are connected by fin-shaped bridge zones |
| abstract |
A technique for providing a novel field effect transistor (FET) architecture that includes a central fin region and one or more vertically stacked nanosheets. A non-planar channel zone is formed which has a first semiconductor layer (208), a second semiconductor layer (206) and a fin-shaped bridge layer between the first semiconductor layer (208) and the second semiconductor layer (206). Forming the non-planar channel region may include forming a nanolayer stack over a substrate (204), forming a trench (502) by removing a portion of the nanolayer stack, and forming a third semiconductor layer (602) in the trench (502). Outer surfaces of the first semiconductor layer (208), the second semiconductor layer (206) and the fin-shaped bridge zone define an effective channel width of the non-planar channel zone. |
| priorityDate |
2019-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |