| abstract |
Systems, methods, and devices for use in biasing and driving high voltage semiconductor devices that use only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices, high voltage power control such as power amplifiers, power management and conversion (e.g. DC / DC) and other applications where a first voltage is large compared to the maximum voltage handling of the low voltage control transistors is to enable. In one aspect, timing the edges of a control signal to the high voltage semiconductor devices is provided by a base edge delay circuit that includes a transistor, a current source, and a capacitor. An inverter can be selectively coupled to an input and / or an output of the basic edge delay circuit via a switch in order to enable timing of a rising edge or a falling edge of the control signal. |