http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112016006557-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e3b235b333453465eac0b462b7e31eb http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2c0f4d9279ef671f18e1e80b81e31c7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03925 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0296 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1828 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2016-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_185f7a6f6c642dd52b6ec82f06287851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_877656b7bfe01f7b452a688ec67132df http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e66e25bb5e42845a3713bdb619bc7bb8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e763c365231087f5c4774b008790385e |
| publicationDate | 2022-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-112016006557-B4 |
| titleOfInvention | Process for manufacturing a CdTe thin-film solar cell |
| abstract | A method for producing a CdTe thin-film solar cell, the method comprising the following steps: • providing a transparent substrate with a transparent conductive layer as a front contact thereon, • Application of a CdS layer to the transparent conductive layer using closed space sublimation technology, with the CdS layer being applied with a thickness in the range of 20 nm to 40 nm, • Application of a CdTe layer to the CdS layer using the closed space sublimation technique, with the CdTe layer being applied with a thickness in the range between 3 µm and 5 µm, • Application of a crystalline layer of CdCl 2 with a thickness in the range of 50 nm to 100 nm on a first surface of the CdTe layer, • Carrying out a first temperature treatment step after the application of the CdCl 2 layer at a temperature in the range from 380° C. to 430° C. for a period in the range from 15 minutes to 45 minutes under atmospheric conditions, • Carrying out a first cleaning step after the first temperature treatment step, the layer stack resulting from the previous process steps being immersed in a solution of diammonium hydrogen citrate with a concentration in the range from 0.1% to 50% for a period in the range from 15 seconds to 5 minutes, • Application of a back contact layer to the first surface after the first cleaning step, wherein the back contact layer is applied with a thickness in the range from 200 nm to 400 nm and contains molybdenum, • Providing copper ions on a first surface of the back contact layer by immersing a layer stack resulting from the previous process steps in a CuCl 2 solution with a concentration in the range from 0.05 mmol/l to 1 mmol/l for a period in the range of 30 seconds up to 2 minutes • Carrying out a second temperature treatment step after removing the layer stack from the CuCl 2 solution at a temperature in the range from 180° C. to 250° C. for a period in the range from 10 minutes to 45 minutes under atmospheric conditions, • Performing an artificial aging step after performing the second Temperature treatment step, the artificial aging step being an illumination of the layer stack resulting from the previous process steps over a period ranging from 1 minute to 48 hours with an illuminance in the range of 5000 lx to 200000 lx at a temperature in the range of 70°C to 80°C under atmospheric conditions, and • Carrying out a second cleaning step after carrying out the artificial aging step, the layer stack resulting from the previous process steps being cleaned by immersing the layer stack in a dimethylformamide solution with a concentration in the range from 50% to 100% for a period in the range from 1 minute to 10 minutes and then rinsed with water and isopropanol. |
| priorityDate | 2016-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.