http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112016004442-B4
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68372 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1434 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 |
filingDate | 2016-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2021-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bf89b15da1225640ae32a3b1feefa4e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75982481d358147ba27c67ea2fab4312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af5d92a9ccad764eaff0b794197db756 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cbe30a4e20b6f0b2c591ff2feec1d3a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e67f16c18f87872a8ee1804748436a13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19dcf2ccd0780fcb95e036d917162b26 |
publicationDate | 2021-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | DE-112016004442-B4 |
titleOfInvention | Process for bonding and debonding of handling devices for semiconductor dies and bonded semiconductor packages |
abstract | A method of processing semiconductor devices, the method comprising: Applying (102) a release layer (210) to a transparent handling device (204), Bonding at least one isolated semiconductor unit (202) to the transparent handling device, Housing (106) the at least one singulated semiconductor unit while it is bonded to the transparent handling device, Ablation (110) of the release layer by irradiating the release layer through the transparent handling device with a laser (214) and Removing (112) the at least one separated semiconductor unit from the transparent handling device after the release layer has been removed, wherein the release layer comprises at least one additional material and wherein the at least one additional material sets a frequency of an electromagnetic radiation absorption property of the release layer, wherein: the at least one additional material has a first additional material and a second additional material, the first additional material being a chemical absorber for a wavelength of 355 nm and the second additional material being a chemical absorber for one of several wavelengths in a range that 600 nm to 740 nm, and wherein the first and the second additional material are each thermally stable at a temperature of ≥ 250 ° C; or the at least one additional material is a chemical absorber for 355 nm in a phenoxy base material, or the at least one additive is 2,5-bis (2-benzimidazolyl) pyridine; or the at least one additional material is: where R is methylcyclohexane or n-butyl; or the at least one additional material is chemical absorbers for one of several wavelengths in a range comprising 600 nm to 740 nm and is completely soluble in cyclohexanone. |
priorityDate | 2015-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.