| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_48ec3faf180c7f4efeed5211d0c9fdef |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23B51-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23B27-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23C5-16 |
| filingDate |
2015-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_507427c572f7390dae46ca96b4e1dccf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce947f79d2fec87fdee2517c6217c9b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0270463c5e86d87ecfcde1ae05ae4b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4037d530b53f4773aebd509524bc69e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3243d273f9f7a733866e286c118f95a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e24ef83f2bedc252c102209bf7c12c9b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5141733c1a0e01b200a26e11ab005d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c96dde171046dbaf3b49694eecbab48 |
| publicationDate |
2017-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-112015005052-T5 |
| titleOfInvention |
Highly twinned oriented polycrystalline diamond film and method of making the same |
| abstract |
In a process of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate charged in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. The temperature T at the center of the polycrystalline diamond film is regulated during the growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites which may have a percentage of orientation along a [110] diamond lattice direction> 70% of the total number of diamond crystallites constituting the polycrystalline diamond film. |
| priorityDate |
2014-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |