| abstract |
A method of fabricating an enhancement mode GaN HFET component having an isolation region that is self-aligned to a contact opening or a metal mask window. Advantageously, the method does not require a dedicated isolation mask and the associated process steps, thus reducing manufacturing costs. The method includes providing an EPI structure that includes a substrate, a buffer layer, a GaN layer, and a barrier layer. A dielectric layer is formed over the barrier layer, and openings are formed in the dielectric layer for component contact holes and an insulation contact hole. |