| abstract |
A method for manufacturing an enhancement-mode GaN HFET component with an isolation region which is self-aligning to a contact opening or a metal mask window. The method advantageously does not require a dedicated isolation mask and the associated method steps, thus reducing the manufacturing costs. The method includes providing an EPI structure including a substrate, a buffer layer, a GaN layer, and a barrier layer. A dielectric layer is formed over the barrier layer and openings are formed in the dielectric layer for component contact openings and an isolation contact opening. |