http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112013001505-T5

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filingDate 2013-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-112013001505-T5
titleOfInvention Apparatus for use in growing Group III nitride crystals using carbon fiber-containing materials and Group III nitride grown therewith
abstract A method and apparatus for growing crystals in a reactor vessel, wherein the reactor vessel uses carbon fiber-containing materials as a structural element to contain the materials for growing the crystals as a solid, liquid or gas within the reactor vessel, such that the reactor vessel is pressurized and pressurized Resist temperatures that are necessary for growing the crystals. The carbon fiber-containing materials encapsulate at least one component of the reactor vessel, with stresses transferred from the encapsulated component to the carbon fiber-containing materials. The carbon fiber-containing materials may be wrapped once or several times around the encapsulated component sufficient to maintain a desired temperature differential between an interior and exterior of the encapsulated component.
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Total number of triples: 27.