http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112012006278-T5
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02366 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1868 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2012-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55f86121800f655e9ebb6bbf832b1861 |
| publicationDate | 2015-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-112012006278-T5 |
| titleOfInvention | Solar cell, process for producing a solar cell and solar cell module |
| abstract | A solar cell includes: a semiconductor substrate of a first conductivity type including an impurity diffusion layer in which an impurity element of a second conductivity type is diffused on a surface side; a passivation layer formed on the impurity diffusion layer and made of an oxide layer of a material of the semiconductor substrate; an anti-reflection layer made of a light-transmissive material having a refractive index different from that of the oxide layer and formed on the passivation layer; a light-receiving-surface-side electrode electrically connected to the impurity diffusion layer and formed on a surface side of the semiconductor substrate; a back surface side electrode formed on another surface side of the semiconductor substrate, wherein the impurity diffusion layer includes a first impurity diffusion layer which is a light receiving region and contains the impurity element in a first concentration and includes a second impurity diffusion layer forming a lower region of the impurity diffusion layer and the impurity element is at a second concentration higher than the first concentration, wherein areas of the first impurity diffusion layer and the second impurity diffusion layer are formed in a same surface state and a thickness of the passivation layer on the second impurity diffusion layer is smaller as a thickness of the passivation layer on the first impurity diffusion layer. |
| priorityDate | 2012-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.