http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112012005023-T5
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31133 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 2012-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc15537a94aaf6e3ac1f169bd84aed07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a38a287f8c119b490d843ef4023606ad http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3a63ff0cf1f0fb761f1fa811fc43fa7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_daa385b860af6b62b065676aef2ec2ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b52b3c730c78ccbbfa3f86d0a2a0470e |
| publicationDate | 2014-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-112012005023-T5 |
| titleOfInvention | Use of an organic planarization mask for cutting a plurality of gate lines |
| abstract | An organic planarization layer (OPL) is formed on a semiconductor substrate comprising a plurality of gate lines thereon. Each gate line includes at least one high-k gate dielectric and one metal gate zone. Subsequently, a patterned photoresist is arranged on the OPL, which has at least one structure formed therein. The at least one structure in the photoresist is perpendicular to each of the gate lines. The structure is then transferred by etching into the OPL and portions of each of the underlying gate lines to provide a plurality of gate stacks each comprising at least one high-k dielectric portion and one metal gate portion. The patterned photoresist and the remaining OPL layer are then removed using a series of steps involving first contacting with a first acid, second contacting with an aqueous solution containing cerium, and a third In -Contact bringing with a second acid include. |
| priorityDate | 2011-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 120.