| abstract |
FinFETs and methods of making FinFETs with a recessed stress layer. One method includes providing an SOI substrate with fins, forming a gate over the fins, forming an offset spacer on the gate, epitaxially growing a thin film to fuse the fins, depositing a dummy spacer around the gate and recessing the fused epitaxial thin film. A silicide is then formed on the recessed fused epitaxial thin film, followed by deposition of a stress thinning layer over the FinFET. By using a recessed and fused epitaxial layer process, a MOSFET can be formed with a vertical silicide (i.e., perpendicular to the substrate). The vertical silicide improves the propagation resistance. |