http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112012002871-T5
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b49b135f099e96a0e4cab2427a48ae8 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate | 2012-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f467a8149a4f8f50078dfeec9c7692aa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e84039e8c5095dfccfe0f8d39b72f7dd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf5f23124d84ad5334c693ce00db8076 |
| publicationDate | 2014-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-112012002871-T5 |
| titleOfInvention | Atomic layer deposition of thin films on transition metal |
| abstract | An atomic layer deposition method of forming a metal film on a substrate comprises a deposition cycle comprising: a) contacting a substrate with a vapor of a metal-containing compound described by Formula 1 for a first predetermined pulse time, a first modified surface to form: MLn (1), wherein: n is 1 to 8; M is a transition metal; L is a ligand and; b) contacting the first modified surface with an acid for a second predetermined pulse time to form a second modified surface; and c) contacting the second modified surface with a reducing agent for a third predetermined pulse time to form a metal layer. |
| priorityDate | 2011-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.