http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112012001058-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-076 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0749 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0725 |
| filingDate | 2012-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2d259b865390527410f2e2865d310b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b62b0f0b2c3544b20f63f2514598f12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1f89e52d2a99842ad2a7ede1f86504e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18e942499cdd3cf9ca3c5e1547c6583d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2e25a05804d99bb83ee9193e23af35d |
| publicationDate | 2019-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-112012001058-B4 |
| titleOfInvention | METHOD FOR PRODUCING A TANDEM PHOTOVOLTAIC UNIT |
| abstract | A method of making a tandem photovoltaic device, comprising: forming a bottom cell (104) on a substrate (122), the bottom cell (104) including an n-type layer (114), a p-type layer (120), and therebetween a lower intrinsic layer (116), wherein the p-type layer (120) is provided to be formed as a molybdenum layer, and wherein the thickness of this molybdenum layer is larger than the thickness of the n-type layer (114 ), applying hydrogen plasma on the n-type layer (114) to increase the crystallinity of a p-type layer (112) of an upper cell (102) growing on the n-type layer (114), forming an upper cell (102 ) over the lower cell (104) to form a tandem cell (100), the upper cell (102) comprising an n-type layer (106), a p-type layer (112), and an upper intrinsic layer (110 ), and forming a transparent electrode (1 08) on the n-type layer (106) of the upper cell (102), the lower intrinsic layer (116) comprising a chalcogenide compound containing Cu-Zn-Sn having a kesterite structure of the formula CuZnSn (SSe), where 0 ≤ x ≤ 1; 0 ≤ y ≤ 1; 0≤z≤1; -1 ≤ q ≤ 1, wherein z is controlled so that a band gap of the lower cell (104) is set to be smaller than a band gap of the upper cell (102) and the thickness of the intrinsic layer (116) between 0.2 and 4.0 microns. |
| priorityDate | 2011-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.