| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_280d87031f0c5786de1808713a1b76b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-183 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2011-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e544d9386d94d7405f88e7efa86a541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f2f30657fd5adf7f3b1c438ab48c820
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5889de8040df0f4513a27a2e724966c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fabdc87d5705e481b28c17b82a94810a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfc940d79ab222cd1b847d6dbf6b5294 |
| publicationDate |
2013-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-112011103882-T5 |
| titleOfInvention |
Improved template layers for heteroepitaxial deposition of III-nitride semiconductor materials using HVPE processes |
| abstract |
Methods of depositing III-nitride semiconductor materials on substrates include depositing a layer of III-nitride semiconductor material on a surface of a substrate at a nucleation HVPE process phase to form a nucleation layer having a microstructure containing at least some amorphous III-nitride semiconductor material. The nucleation layer may be annealed to form crystalline epitaxial nucleation material islands on the surface of the substrate. The epitaxial nucleation material islands can grow and combine at a merging HVPE process phase to form a nucleation template layer of the epitaxial nucleation material. The nucleation template layer may at least substantially cover the surface of the substrate. Additional III-nitride semiconductor material may be deposited on the nucleation template layer of the epitaxial nucleation material in an additional HVPE process phase. Final and intermediate structures containing III-nitride semiconductor material are formed by such methods. |
| priorityDate |
2010-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |