| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-96 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
2011-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70995cdaa0661328dbcb63cd0c5e7155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01df6875062ed6988b3f9b55224d50fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6ae7f001a90451a8de54b64ff43cd7e |
| publicationDate |
2015-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-112011103146-B4 |
| titleOfInvention |
Method for improving the mechanical properties of semiconductor interconnects with nanoparticles |
| abstract |
Multilayer semiconductor structure comprising: an ultra-low-k dielectric (ULK) layer (100), the ULK dielectric layer having a plurality of trenches (180) formed therein and vias (150) filled with metal; a capping layer (130) on which the dielectric ULK layer (100) is disposed; and Nanoparticles (120) that form a monolayer at an interface between the dielectric ULK layer and the cap layer. |
| priorityDate |
2010-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |