http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112011102970-T5

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filingDate 2011-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1284e7904b96013bd3934a6f83d21e43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6615f86fbc9760e47e334fce09663cdb
publicationDate 2013-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-112011102970-T5
titleOfInvention Nanostructured electrode for pseudo-capacitive energy storage
abstract To produce a pseudo-capacitor with a high stored energy density, a nanoporous stencil carrier material is used, which is a carrier material of anodically produced aluminum oxide (AAO). A pseudo-capacitive material is deposited by means of atomic layer deposition, chemical vapor deposition and / or electrochemical deposition using a nucleation layer conforming along the sidewalls of the AAO support material. The strength of the pseudocapacitive material on the walls can be precisely controlled in the deposition process. The AAO is etched to form an array of nanotubes of PC material that are cylindrical and structurally stable with voids therein. Because the framework AAO substrate is removed, only the active PC material remains, maximizing energy per mass. In addition, nanotubes can be released from a substrate so that free-standing nanotubes can be deposited with random orientation onto a conductive substrate to form an electrode of a pseudocapacitor.
priorityDate 2010-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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