http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112011102261-T5
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1150d1d80ff7a4912c50ba531a56d6f2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B1-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C8-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C8-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2011-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46c08d0e0d7f02889e51b038ad53208b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11d12270353b713f76376bfef3a2777d |
| publicationDate | 2013-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-112011102261-T5 |
| titleOfInvention | Conductive paste composition for a solar cell |
| abstract | It is an object of the present invention to provide a conductive paste composition for a solar cell which facilitates the control of a penetration amount of an electrode material and enables easy achievement of ohmic contact when an electrode generates a burn-through method in a solar cell having a flat emitter structure which has a thinner n-type layer. Since the light-receiving surface electrode is made of a thick-film silver containing the flint glass in the range of 1 to 10 parts by weight per 100 parts by weight of silver, and the flint glass has a composition containing PbO in the range of 20 to 62 (% by mole), B 2 O 3 in the range of 1 to 18 (mol%), SiO 2 in the range of 18 to 65 (mol%) and at a Pb / Si molar ratio in the range of 0.5 to 1.7, Li 2 O in the range of 0.6 to 18 (mol%), Al 2 O 3 in the range of 0 to 6 (mol%), TiO 2 in the range of 0 to 6 (mol%), ZnO in the range of 0 to 30 (mol%), P 2 O 5 in the range of 0 to 6 (mol%) and Sb 2 O 5 in the range of 0 to 4 (mol%), a favorable ohmic contact with the n- Layer despite a reduced to about 100 (microns) line width can be achieved, resulting in a low contact resistance. |
| priorityDate | 2010-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.