http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112011100610-T5

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
filingDate 2011-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89e09510a62fcd148a40a5491ed12d61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83f5ac50a843e1c4eed75378b8d981ff
publicationDate 2013-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-112011100610-T5
titleOfInvention Atmospheric pressure chemical vapor deposition with saturation control
abstract There is disclosed a method of coating a substrate that is heated to a temperature below the condensation temperature of a semiconductor material at atmospheric pressure, the method comprising the steps of mixing a mass of semiconductor material and a heated inert gas stream, vaporizing the controlled mass of semiconductor material inert gas to produce an undersaturated fluid mixture, directing the subsaturated fluid mixture onto a substrate, wherein the substrate is at substantially atmospheric pressure, depositing a layer of semiconductor material on a surface of the substrate, extracting non-deposited semiconductor material, and Repeating the steps of generating, directing, depositing, and extracting to minimize a quantity of non-deposited semiconductor material.
priorityDate 2010-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.