| abstract |
Semiconductor structure comprising: a substrate having a semiconductor layer and a dielectric connection layer, wherein at least one semiconductor unit is mounted at an interface between the semiconductor layer and the dielectric connection layer; a via structure through the substrate (TSV structure) embedded in the substrate, the TSV structure comprising a conductive material and extending at least from the interface to a back surface of the substrate; and at least one backside pseudo plug embedded in the substrate, the at least one backside pseudo plug extending from the back surface to a depth into but not beyond the substrate, the depth being less than a vertical distance between the back surface and the interface, and wherein the at least one rear pseudo plug has no electrical contact with a conductive structure comprising a conductive area farther from the back surface than the depth, and - Has no electrical contact with a conductive structure which extends contiguous to the conductive region, which is farther away from the back surface than the depth. |