http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112010004362-T5
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2010-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e11fa3913727ce65a2d7b72196cb95ad |
| publicationDate | 2012-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-112010004362-T5 |
| titleOfInvention | EPITAXIAL WAFERS AND METHOD FOR THE PRODUCTION THEREOF |
| abstract | When a mixed gas of trichlorosilane and dichlorosilane is used as the source gas, a silicon layer is epitaxially grown on a surface of a silicon wafer in a temperature range of 1000 to 1100 ° C, preferably 1040 to 1080 ° C. When dichlorosilane is used as the source gas, a silicon layer is epitaxially grown on a surface of a silicon wafer in a temperature range of 900 to 1150 ° C, preferably 1000 to 1150 ° C. Accordingly, a silicon epitaxial wafer having a low haze degree, excellent planarity (edge rolling off), and a reduced orientation dependency of the epitaxial growth rate and capable of satisfying the higher integration of semiconductor devices can be obtained, and this epitaxial wafer can be widely used the production of semiconductor devices can be used. |
| priorityDate | 2009-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.