http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112010003900-T5
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_696ca0ae93d5cf5a686273601361781f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
| filingDate | 2010-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d57412aec682efd233c246c3359e64d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_419f939570a9f21722b3ffb3d609539a |
| publicationDate | 2012-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-112010003900-T5 |
| titleOfInvention | Solution for etching silicon and etching process |
| abstract | An etch solution is provided which realizes a high etch rate when processing silicon by etching, particularly in an anisotropic etching process of silicon in a manufacturing process of semiconductors or MEMS parts. containing etching solution, and causing the decrease of the Si etching rate to decrease when Cu is in the solution, and an etching process. The etching solution is a solution for etching silicon, which is an alkaline aqueous solution containing an alkaline hydroxide, hydroxylamine and a thiourea and which is characterized by anisotropic dissolution of monocrystalline silicon, and the etching method is an etching method of Silicon using the etching solution. |
| priorityDate | 2009-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 74.