| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-918
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823493
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2009-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7db0fc990aaabde083489e1b044f6b3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_404a7cc62e68fd4411507b653358c33d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_459c5588c5a38895656a4aded463ca3c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_583073b629be771d500c8b83df736f1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fcfbfdf924f263fd897620023c60b62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26d0a5656dc41a8531c988b5741820d7 |
| publicationDate |
2011-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-112009000651-T5 |
| titleOfInvention |
Penetrating implantation to form a semiconductor device |
| abstract |
Semiconductor unit comprising: a gate stack disposed on a substrate; Tip regions having doping impurities of a first conductivity type disposed in the substrate on each side of the gate stack; Halo regions having doping impurities of a second conductivity type opposite to the first conductivity type disposed in the substrate adjacent the tip regions; and a threshold voltage implant region having doping impurities of the second conductivity type disposed in the substrate directly below the gate stack, the concentration of the second conductivity type doping impurities in the threshold voltage implant region being approximately the same as the concentration of the second conductivity type doping impurities in the halo areas. |
| priorityDate |
2008-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |