| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66583 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2008-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82c1c4dcc4bf8097aed99364bbb5a285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60f121b3bacd29ea5959440dcfb69e14 |
| publicationDate |
2010-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-112008000094-T5 |
| titleOfInvention |
CMOS device with dual epi channels and self-aligned contacts |
| abstract |
A CMOS device comprising: a first epitaxial region; a PMOS device formed on the first epitaxial region; a second epitaxial region, wherein the second epitaxial region is formed of a different material than the first epitaxial region; an NMOS device formed on the second epitaxial region; and electrical contacts coupled to the PMOS and NMOS devices, the electrical contacts being self-aligned. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102015106397-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9401274-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102015106397-A1 |
| priorityDate |
2007-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |