| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2005-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_499bdc73887134be7f3461f9690b6f51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dcc9e402148133048ff83796112700c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8337ce723fb5641b696ac5b3ca888f87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_460a7c1582ef5f582d1a700612e7b8f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01256746433fa298de5e1db9f79f600b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ef21934ad3d570854f3186f7521be6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e09485f7c1907393b48938dc7b6d297
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5b67e2da97fd009230a32fc81892613 |
| publicationDate |
2010-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-112005001828-B4 |
| titleOfInvention |
A method of fabricating semiconductor devices having planarization of a semiconductor structure to form exchange metal gates and corresponding semiconductor structure |
| abstract |
A method comprising: Forming a victim gate structure; Removing the sacrificial gate structure; Replacing the sacrificial gate structure with a metal gate electrode; Covering the metal gate electrode with a nitride layer; and Covering the nitride layer with a carbon-doped oxide interlayer dielectric. |
| priorityDate |
2004-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |