| abstract |
A substrate for performing ionization desorption on silicon, comprising a substrate of the formula: wherein X is an H atom or Y wherein at least 25 mole percent of X is Y and Y is a hydroxyl or -OR 1 or -O-SiR 1 , R 2 , R 3 group wherein R 1 , R 2 and R 3 are selected from the group consisting of C 1 to C 25 straight, cyclic or branched alkyl, aryl or alkoxy groups, a hydroxyl group or a siloxane group wherein the groups of R 1 , R 2 and R 3 are unsubstituted or with one or more groups such as halogen, cyano, amino, diol, nitro, ether, carbonyl, epoxide, sulfonyl, cation exchange, anion exchange, carbamate, amide, urea, peptide -, protein, carbohydrate and nucleic acid functionalities are substituted, and the letter "n" is an integer from 1 to infinity and any free valences are silicon atoms, hydrogen atoms or impurities. |