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filingDate 2003-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2010-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-10393702-B4
titleOfInvention Method for producing a memory cell, memory cell and memory cell arrangement
abstract Method for producing a binary information memory cell, in which • a first electrically conductive region (311) is formed in and / or on a substrate (301); • a second electrically conductive region (313) is formed at a distance from the first electrically conductive region (311) such that a cavity (321) is formed between the first and the second electrically conductive region; • the first and the second electrically conductive region are arranged at a distance such that upon application a. a first voltage is applied to the electrically conductive regions (311, 313) of material from at least one of the electrically conductive regions in such a way that a structure bridging the cavity (321) between the electrically conductive regions is formed free-growing; b. a second voltage to the electrically conductive regions (311, 313) material of a cavity (321) between the electrically conductive regions bridging structure is reformed.
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