| abstract |
Method comprising that: (a) forming a plurality of copper bumps on a semiconductor die formed by using a plating process, the semiconductor die comprising a semiconductor device; (b) forming an adhesive layer on each copper bump in the plurality of copper bumps; and (c) forming an oxidation-resistant layer on each copper bump in the plurality of copper bumps, wherein the adhesive layer is between the oxidation-resistant layer and the copper bump. |