http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10358556-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69a4ae662cd6a46490ee45a70e85dc39 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-119 |
| filingDate | 2003-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e000c0c174c3d16474c3b293b1b58f64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_130774bcd605859217e85da3a73a54f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38b10966de92bfe8ea293adcbfc70746 |
| publicationDate | 2010-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-10358556-B4 |
| titleOfInvention | Formation of self-aligning contacts using double SiN spacer layers |
| abstract | A method of making a self-aligned contact in an integrated circuit, the integrated circuit comprising a substrate, at least one pair of wordline stacks disposed on the substrate, having respective top sides and sidewalls, the method comprising: Defining first spacer layers over the sidewalls; Depositing an oxide layer over the top of the word line stacks, the first spacer layers, and a surface of the substrate disposed between the first spacer layers; Removing the oxide layer from the first spacer layers, thereby forming a remaining oxide layer forming the surface of the substrate disposed between the first spacer layers; Depositing a second insulating layer over the remaining oxide layer and the first spacer layers; Etching the second insulating layer to define second spacer layers, wherein the second spacer layers are disposed over the first spacer layers and over corresponding portions of the remaining oxide layer, thus covering the respective portions of the remaining oxide layer disposed on the surface of the substrate between the first spacer layers ; ... |
| priorityDate | 2002-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.