http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10358556-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-119 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate | 2003-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b81e7f89aeaa150427f0528089b6d3ae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0601e932578c9da46c6c469e4239595 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b997bcb32149960917f5b940cabb1c5b |
publicationDate | 2004-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | DE-10358556-A1 |
titleOfInvention | Formation of self-aligning contacts using double SiN spacers |
abstract | One method of making a self-aligning contact in an integrated circuit includes defining first spacer layers over the sidewalls of a pair of word line stacks. An oxide layer is deposited over the tops of the word line stacks, the first spacer layers, and a surface of the substrate disposed between the first spacer layers. The oxide layer is removed from the first spacer layers, thereby forming a remaining oxide layer that covers the surface of the substrate disposed between the first spacer layers. Second spacer layers are formed over the first spacer layers and cover respective parts of the remaining oxide layer. The remaining oxide layer is removed to thereby form undercut areas. The undercut areas are substantially filled with contact material during contact formation. |
priorityDate | 2002-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.