| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-945
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0387 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04J3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04J1-16 |
| filingDate |
2003-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_760bc202a382f4f5ec597e0e338293fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ef5a3b7c0848c72086ccd3035cee320
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b72ea3ed7d6eff38be7952c2fa9dbf0e |
| publicationDate |
2006-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-10352068-B4 |
| titleOfInvention |
Forming silicon nitride islands for increased capacity |
| abstract |
Method for producing a semiconductor component comprising the following method steps: (a) forming a trench with sidewalls in a semiconductor substrate; (b) forming an oxide mask on a lower portion of the sidewalls; (c) depositing multiple nitride islands on the oxide mask; (d) removing a portion of the oxide mask that is not covered by the plurality of nitride islands to expose areas in the lower portion of the sidewalls; (e) deepening the exposed areas in the lower area of the side walls; (f) removing the nitride islands; and (g) removing the oxide mask. |
| priorityDate |
2002-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |