http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10347462-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2003-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1e4c9e8ede3b78f5639ae823b033cfa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b441b4943e84d02c9532d412bd29a265 |
| publicationDate | 2004-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-10347462-A1 |
| titleOfInvention | Bottom electrode of a capacitor of a semiconductor device and method for producing the same |
| abstract | In order to manufacture a bottom electrode of a capacitor of a semiconductor device, a first insulating layer pattern with a first contact hole is formed on a substrate and a contact plug for the bottom electrode is formed in the contact hole. A second insulation layer is formed on the first insulation layer pattern and on the contact plug. The second insulating layer has a second etching rate that is higher than a first etching rate of the first insulating layer pattern. The second insulation layer is etched to form a second insulation layer pattern with a second contact hole that exposes the contact plug. A conductive film is then formed on the side wall and the bottom surface of the second contact hole. In accordance with the difference between the first etching rate and the second etching rate, the etching effect of the first insulating layer pattern near the contact plug is reduced. |
| priorityDate | 2003-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.