| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate |
2003-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87e3b949d03fa05534fb40f58316e466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b1d20dc4e7e7164c2e1e06140ba092b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1d85037308491c995223b3356d278a9 |
| publicationDate |
2006-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-10344275-B4 |
| titleOfInvention |
Method for controlled structuring of an ARC layer in a semiconductor device |
| abstract |
Method for producing a semiconductor structure with a layer sequence (11 ', 12), comprising the steps: Applying an ARC layer (11 '), ie an antireflection layer, to a substrate (10) to be patterned, the ARC layer (11') comprising a predetermined substance; Applying and patterning a photoresist layer (12) over the ARC layer (11 '); and Patterning the ARC layer (11 ') in a plasma etching step; Detecting a predetermined optical emission with a detection means during said plasma etching step effected by the predetermined substance in the ARC layer (11 ') and different from an optical emission caused by the photoresist layer (12); and Aborting the plasma etching step when the optical emission caused by the predetermined substance in the ARC layer (11 ') is less than a predetermined emission intensity threshold. |
| priorityDate |
2003-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |