| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-945
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94 |
| filingDate |
2003-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40ae72828f44c1bf4b2760fcd1236f8b |
| publicationDate |
2004-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-10310128-A1 |
| titleOfInvention |
Method for producing semiconductor zones with n-conductivity in a semiconductor body |
| abstract |
The invention relates to a method for producing an n-doped semiconductor zone (5) by diffusing antimony out of an upper region (4b) of a polysilicon filling (4) in a trench (2). |
| priorityDate |
2003-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |