http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10300577-B4

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filingDate 2003-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e84b7aee69e30d7fdd0947e317306f8
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publicationDate 2012-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-10300577-B4
titleOfInvention Semiconductor device with vertical power device comprising a separation trench and method for its preparation
abstract Method for producing a semiconductor component which has a first vertical power component (5) and at least one lateral, active component (6) and / or at least one second vertical power component with the steps: Providing a silicon substrate (1) having a front and a rear side, Etching at least one trench (2) which completely surrounds at least a partial area of the front side, into the silicon substrate (1), - filling the at least one trench (2) with an insulation (4) which contains at least one dielectric or is a dielectric, - Performing process steps on the front side of the silicon substrate (1) for producing the first vertical power device (5) and the at least one lateral, active device (6) and / or the at least one second vertical power device, so that both the first power device (5) as well as the at least one lateral active component (6) and / or the at least one second vertical power component concentrically or eccentrically enclose a common reference point and in each case by the at least one ...
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Total number of triples: 23.